Nanoelectronics and Photonics, Nanotechnologia, nanotechnologia, materiały i chemia supramolekularna

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Nanoelectronics and Photonics
Nanostructure Science and Technology
Series Editor: David J. Lockwood, FRSC
National Research Council of Canada
Ottawa, Ontario, Canada
Current volumes in this series:
Functional Nanostructures: Processing, Characterization and Applications
Edited by Sudipta Seal
Light Scattering and Nanoscale Surface Roughness
Edited by Alexei A. Maradudin
Nanotechnology for Electronic Materials and Devices
Edited by Anatoli Korkin, Evgeni Gusev, and Jan K. Labanowski
Nanotechnology in Catalysis, Volume 3
Edited by Bing Zhou, Scott Han, Robert Raja, and Gabor A. Somorjai
Nanostructured Coatings
Edited by Albano Cavaleiro and Jeff T. De Hosson
Self-Organized Nanoscale Materials
Edited by Motonari Adachi and David J. Lockwood
Controlled Synthesis of Nanoparticles in Microheterogeneous Systems
Vincenzo Turco Liveri
Nanoscale Assembly Techniques
Edited by Wilhelm T.S. Huck
Ordered Porous Nanostructures and Applications
Edited by Ralf B. Wehrspohn
Surface Effects in Magnetic Nanoparticles
Dino Fiorani
Interfacial Nanochemistry: Molecular Science and Engineering at Liquid-Liquid Interfaces
Edited by Hitoshi Watarai
Nanoscale Structure and Assembly at Solid-Fluid Interfaces
Edited by Xiang Yang Liu and James J. De Yoreo
Introduction to Nanoscale Science and Technology
Edited by Massimiliano Di Ventra, Stephane Evoy, and James R. Heflin Jr.
Alternative Lithography: Unleashing the Potentials of Nanotechnology
Edited by Clivia M. Sotomayor Torres
Semiconductor Nanocrystals: From Basic Principles to Applications
Edited by Alexander L. Efros, David J. Lockwood, and Leonid Tsybeskov
Nanotechnology in Catalysis, Volumes 1 and 2
Edited by Bing Zhou, Sophie Hermans, and Gabor A. Somorjai
(Continued after index)
Anatoli Korkin
l
Federico Rosei
Editors
Nanoelectronics
and Photonics
From Atoms to Materials, Devices,
and Architectures
13
Editors
Anatoli Korkin
Nano and Giga Solutions
Gilbert, AZ
USA
korkin@nanoandgiga.com
Federico Rosei
Initiative National de la Recherche
Scientifique, E
´
nergie, Mate´ riaux et
Te´ le´ communications
Universite´ du Que´ bec
Que´ bec, QC Canada
rosei@emt.inrs.ca
Series Editor
David J. Lockwood, FRSC
National Research Council of Canada
Ottawa, Ontario, Canada
ISBN: 978-0-387-76498-6
e-ISBN: 978-0-387-76499-3
DOI: 10.1007/978-0-387-76499-3
Library of Congress Control Number: 2008931856
# 2008 Springer Science
þ
Business Media, LLC
All rights reserved. This workmay not be translated or copied in whole or in part without the written
permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, NewYork,
NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in
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The use in this publication of trade names, trademarks, service marks, and similar terms, even if they
are not identified as such, is not to be taken as an expression of opinion as to whether or not they are
subject to proprietary rights.
Cover illustrations: 1. Fragment of an atomic scale model of Mo-HfO
2
interface (Chapter 7);
2. Photoluminescence spectra computed for different times after the 1s excitation with classical
field (Chapter 10); 3. Electron distribution across the nanowire, for the wire width of 30 nm (left panel)
and 8 nm (right panel)(Chapter6);4.Afield-programmable nanowire interconnect (FPNI) structure
(Chapter 4); 5. Modulated nanoindentation of a ZnO nanobelt with an atomic force microscope tip
(Chapter 9); 6. Ferromagnet/antiferromagnet bilayers (Chapter 5); 7. A woodpile structure of a 3D
photonic crystal (Chapter 11); 8. A scanning electron microscope (SEM) image of a structure fabricated
by two-photon polymerization (2PP) technique, which resembles pulmonary alveoli – microcapillaries
responsible for gas exchange in the mammalian lungs (Chapter 12); 9. The time evolution of the space
charge region during deep level transient spectroscopy (DLTS) measurements (Chapter 8).
Printed on acid-free paper
springer.com
Preface
Tutorial lectures given by world-renowned researchers have become one of the
important traditions of the first two days of the Nano and Giga Challenges
(NGC) conference series. Soon after preparations for the first forum in Mos-
cow, Russia, had begun, the organizers realized that publication of the lectures
notes from NGC2002 would be a valuable legacy of the meeting and a signifi-
cant educational resource and knowledge base for students, young researchers,
and experts alike. Our first book was published by Elsevier and received the
same title as the meeting itself – Nano and Giga Challenges in Microelectronics
[1]. Our second book, Nanotechnology for Electronic Materials and Devices [2]
based on the tutorial lectures at NGC2004 in Krakow, Poland, and the current
book from NGC2007 in Phoenix, Arizona, have been published in Springer’s
Nanostructure Science and Technology series.
Nanotechnology as the art (i.e., science and technique) of control, manip-
ulation, and fabrication of devices with structural and functional attributes
smaller than 100 nm (0.1 mm) is perfectly suited to advanced CMOS technology.
This technology holds the capacity for massive production of high-quality
nanodevices with an enormous variety of applications from computers to
biosensors, from cell phone to space shuttles, and from large display screens
to small electronic toys.
Exponential growth of the number of transistors in commercial integrated
circuits (ICs) was first identified as a trend in 1965 byG.Moore, Intel’s co-founder.
Later recognized as Moore’s law,
1
this trend has become an imperative and, until
recently, almost a religious prophecy as documented in the International Technol-
ogy Roadmap for Semiconductors (ITRS).
2
However, scaling of transistors and
other devices to smaller and smaller sizes, which has provided the basis for this
exponential growth, has limits, physical (size of the atoms), technological (litho-
graphy) and economic (see articles of K. Likharev and S. Williams), which will be
1
The number of transistors that can be placed on a commercial integrated circuit is increasing
exponentially, doubling approximately every 2 years: G.E. Moore, Electronics, vol. 38, No. 8,
1965.
2
v
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