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September 1997
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
-24 A, -20 V. R
DS(ON)
= 0.05
W
@ V
GS
= -4.5 V.
R
DS(ON)
= 0.07
W
@ V
GS
= -2.7 V.
R
DS(ON)
= 0.075
W
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol Parameter
NDP6020P
NDB6020P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage - Continuous
±8
V
I
D
Drain Current - Continuous
-24
A
- Pulsed
-70
P
D
Total Power Dissipation @ T
C
= 25
°
C
60
W
Derate above 25
°
C
0.4
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
© 1997 Fairchild Semiconductor Corporation
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
µA
T
J
= 55°C
-10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-0.4
-0.7
-1
V
T
J
= 125°C
-0.3
-0.56
-0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -12 A
0.041
0.05
W
T
J
= 125°C
0.06
0.08
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -10 A
0.059
0.07
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.5 V, I
D
= -10 A
0.064 0.075
I
D(on)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-24
A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -12 A
14
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1590
pF
C
oss
Output Capacitance
725
pF
C
rss
Reverse Transfer Capacitance
215
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= -20 V, I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6
W
15
30
nS
t
r
Turn - On Rise Time
27
60
nS
t
D(off)
Turn - Off Delay Time
120
250
nS
t
f
Turn - Off Fall Time
70
150
nS
Q
g
Total Gate Charge
V
DS
= -10 V,
I
D
= -24 A, V
GS
= -5 V
25
35
nC
Q
gs
Gate-Source Charge
5
nC
Q
gd
Gate-Drain Charge
10
nC
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-24
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
-80
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -12 A
(Note 1)
-1.1
-1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= -24 A,
dI
F
/dt = 100 A/µs
60
ns
Reverse Recovery Current
-1.7
A
I
rr
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance, Junction-to-Case
2.5
°
C/W
R
q
JA
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6020P Rev.C1
Typical Electrical Characteristics
-50
1.8
V = -5.0V
GS
-4.5
-4.0
V = -2.5 V
GS
-40
-3.5
1.6
-2.7
-3.0
-30
1.4
-3.0
-3.5
-2.7
-4.0
-20
1.2
-2.5
-4.5
-5.0
-10
-2.0
1
0
0.8
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
-50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
2
V = -4.5V
GS
I = -12A
D
1.6
V =-4.5V
GS
T = 125°C
J
1.4
1.5
1.2
1
1
25°C
0.8
-55°C
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
0
-10
-20
-30
-40
-50
T , JUNCTION TEMPERATURE (°C)
I , DRAIN CURRENT (A)
J
D
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
-10
1.2
V = -5V
DS
T = -55°C
J
25°C
V = V
GS
DS
1.1
I = -250µA
D
-8
125°C
1
-6
0.9
-4
0.8
0.7
-2
0.6
0
0.5
-0.5
-1
-1.5
-2
-2.5
-50
-25
0
25
50
75
100
125
150
175
V , GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
J
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
NDP6020P Rev.C1
DS
D
Typical Electrical Characteristics
(continued)
1.08
20
I = -250µA
D
10
V = 0V
GS
4
1.06
T = 125°C
J
1
1.04
25°C
0.1
-55°C
1.02
1
0.01
0.98
0.001
0.96
-50
-25
0
25
50
75
100
125
150
175
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
T , JUNCTION TEMPERATURE (°C)
J
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
8
4000
V = -5V
DS
3000
I = -24A
D
-10V
2000
C
iss
6
-15V
1000
C
oss
4
500
300
C
rss
2
f = 1 MHz
V = 0 V
GS
200
0
100
0
10
20
30
40
0.1
0.2
0.5
1
2
5
10
20
Q , GATE CHARGE (nC)
-V , DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
-V
DD
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
V
IN
R
L
90%
90%
D
V
OUT
V
OUT
V
GS
10%
10%
R
GEN
G
DUT
90%
V
IN
50%
50%
S
10%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP6020P Rev.C1
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