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March 1996
NDP7050L / NDB7050L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
75A, 50V, R
DS(ON)
= 0.015
W
@ V
GS
= 5V
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol Parameter
NDP7050L
NDB7050L
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
W
)
50
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P
< 50 µs)
± 40
I
D
Drain Current - Continuous
75
A
- Pulsed
225
P
D
Total Power Dissipation @ T
C
= 25
°
C
150
W
Derate above 25
°
C
1
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
© 1997 Fairchild Semiconductor Corporation
NDP7050L.SAM
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 75 A
550
mJ
I
AR
Maximum Drain-Source Avalanche Current
75
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
50
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 50 V, V
GS
= 0 V
250
µA
T
J
= 125°C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1
1.3
2
V
T
J
= 125°C
0.65
0.8
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 37.5 A
0.01
0.015
W
T
J
= 125°C
0.016 0.024
I
D(on)
On-State Drain Current
V
GS
= 5 V, V
DS
= 10 V
75
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 37.5 A
15
67
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
4200
4000
pF
C
oss
Output Capacitance
1100
1600
pF
C
rss
Reverse Transfer Capacitance
310
800
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 5 V, R
GEN
= 10
W
R
GS
= 10
W
23
40
nS
t
r
Turn - On Rise Time
460
600
nS
t
D(off)
Turn - Off Delay Time
100
150
nS
t
f
Turn - Off Fall Time
270
400
nS
Q
g
Total Gate Charge
V
DS
= 48 V,
I
D
= 75 A, V
GS
= 5 V
86
115
nC
Q
gs
Gate-Source Charge
13
nC
Q
gd
Gate-Drain Charge
62
nC
NDP7050L.SAM
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
75
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
225
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(Note 1)
0.92
1.3
V
T
J
= 125°C
0.85
1.2
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 60A,
dI
F
/dt = 100 A/µs
108
150
ns
Reverse Recovery Current
4.6
10
A
I
rr
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance, Junction-to-Case
1
°
C/W
R
q
JA
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7050L.SAM
Typical Electrical Characteristics
120
2
V = 10V
GS
6.0
4.0
1.8
100
5.0
4.5
3.5
V = 3.0V
GS
1.6
80
1.4
3.5
3.0
60
4.0
1.2
4.5
40
5.0
1
2.5
6.0
20
0.8
10
0
0.6
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
120
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
2
I = 40A
D
V = 5V
GS
1.8
1.75
V = 10V
GS
T = 125°C
J
1.5
1.6
1.4
1.25
1.2
25°C
1
1
0.75
0.8
-55°C
0.5
0.6
-50
-25
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T , JUNCTION TEMPERATURE (°C)
I , DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
80
1.4
V = 10V
DS
T = -55°C
J
V = V
GS
DS
125°C
1.2
I = 250µA
D
60
25°C
1
40
0.8
20
0.6
0
0.4
0
1
2
3
4
-50
-25
0
25
50
75
100
125
150
175
V , GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDP7050L.SAM
D
J
J
Typical Electrical Characteristics
(continued)
1.15
5
80
I = 250µA
D
V = 0V
GS
1.1
10
T = 125°C
J
1.05
1
25°C
-55°C
1
0.1
0.95
0.01
0.9
-50
-25
0
25
50
75
100
125
150
175
0.001
T , JUNCTION TEMPERATURE (°C)
0.2
0.4
0.6
0.8
1
1.2
1.4
J
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
7000
10
5000
C
iss
I = 75A
D
V = 12V
DS
48V
8
2000
24V
C oss
6
1000
4
500
f = 1 MHz
V = 0V
GS
2
C
rss
300
200
0
1
2
3
5
10
20
30
50
0
40
80
120
160
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q , GATE CHARGE (nC)
g
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
V
IN
R
L
90%
90%
D
V
OUT
V
OUT
V
GEN
10%
10%
R
INVERTED
GEN
DUT
G
90%
R
GS
V
IN
50%
50%
S
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP7050L.SAM
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